Groupe de Physique Statistique

Equipe 106, Institut Jean Lamour

                     
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Articles dans des revues à comité de lecture

Monte Carlo simulations of phonon transport in nanoporous silicon and germanium
Jean V., Fumeron S., Termentzidis K., Tutashkonko S., Lacroix D.
J. Appl. Phys. 115 (2014) 024304
DOI : 10.1063/1.4861410

Heat conduction of nanoporous silicon and germanium thin films is studied thanks to a statistical approach. Resolution of phonon Boltzmann transport equation is performed with a Monte Carlo technique in order to assess thermal conductivity. Sensitivity of this latter property with respect to parameters such as phonon mean free path and characteristics of the pores (distribution, size, porosity) is discussed and compared to predictions from analytical models. Results point out that thermal properties might be tailored through the design of the porosity and more specifically by the adjustment of the phonon-pore mean free path. Finally, an effective medium technique is used to extend our work to multilayered crystalline-nanoporous structures. Results show that ought to pore scattering, a diffusive Fourier regime can be recovered even when the film thickness is below the bulk limit.



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